vishay siliconix SUP50N10-21P document number: 62781 s12-2730-rev. a, 12-nov-12 www.vishay.com 1 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 for technical questions, contact:: pmostechsupport@vishay.com n-channel 100 v (d-s) mosfet features ? trenchfet ? power mosfet ? 100 % r g and uis tested ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 applications ? dc/ac inverters ? primary side switching ? synchronous rectification notes: a. duty cycle ? 1 %. b. see soa curve for voltage derating. c. when mounted on 1" square pcb (fr-4 material). d. package limited. product summary v ds (v) r ds(on) ( ? ) max. i d (a) q g (typ.) 100 0.021 at v gs = 10 v 50 d 30.2 nc 0.023 at v gs = 8 v 49.7 0.028 at v gs = 6 v 45 to-220ab top view gds ordering information: SUP50N10-21P-ge3 (lead (pb)-free and halogen-free) n-channel mosfet g d s absolute maximum ratings (t c = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 100 v gate-source voltage v gs 20 continuous drain current (t j = 150 c) t c = 25 c i d 50 d a t c = 70 c 41.6 pulsed drain current (t = 300 s) i dm 60 avalanche current i as 40 single avalanche energy a l = 0.1 mh e as 80 mj maximum power dissipation a t c = 25 c p d 125 b w t a = 25 c c 3.1 operating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance ratings parameter symbol limit unit junction-to-ambient (pcb mount) c r thja 40 c/w junction-to-case (drain) r thjc 1
www.vishay.com 2 document number: 62781 s12-2730-rev. a, 12-nov-12 vishay siliconix SUP50N10-21P this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 for technical questions, contact:: pmostechsupport@vishay.com notes: a. pulse test; pulse width ? 300 s, duty cycle ? 2 %. b. guaranteed by design, not subject to production testing. c. independent of operating temperature. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications (t j = 25 c, unless otherwise noted) parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a 100 v gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 24 gate-body leakage i gss v ds = 0 v, v gs = 20 v 250 na zero gate voltage drain current i dss v ds = 100 v, v gs = 0 v 1 a v ds = 100 v, v gs = 0 v, t j = 125 c 50 v ds = 100 v, v gs = 0 v, t j = 150 c 250 on-state drain current a i d(on) v ds ?? 10 v, v gs = 10 v 20 a drain-source on-state resistance a r ds(on) v gs = 10 v, i d = 10 a 0.017 0.021 ? v gs = 8 v, i d = 9.6 a 0.019 0.023 v gs = 6 v, i d = 8.7 a 0.022 0.028 forward transconductance a g fs v ds = 20 v, i d = 10 a 40 s dynamic b input capacitance c iss v gs = 0 v, v ds = 50 v, f = 1 mhz 2055 pf output capacitance c oss 227 reverse transfer capacitance c rss 120 total gate charge c q g v ds = 50 v, v gs = 10 v, i d = 10 a 45 68 nc gate-source charge c q gs 10.5 gate-drain charge c q gd 15.9 gate resistance r g f = 1 mhz 0.3 1.5 3 ? tu r n - o n d e l ay t i m e c t d(on) v dd = 20 v, r l = 2 ? i d ? 8 a, v gen = 10 v, r g = 1 ? 10 20 ns rise time c t r 10 20 turn-off delay time c t d(off) 22 33 fall time c t f 714 drain-source body diode ratings and characteristics (t c = 25 c) b continuous current i s 50 a pulsed current i sm 60 forward voltage a v sd i f = 8 a, v gs = 0 v 0.75 1.2 v reverse recovery time t rr i f = 8 a, di/dt = 100 a/s 55 83 ns peak reverse recovery current i rm(rec) 4.1 6.2 a reverse recovery charge q rr 107 161 nc
vishay siliconix SUP50N10-21P document number: 62781 s12-2730-rev. a, 12-nov-12 www.vishay.com 3 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 for technical questions, contact:: pmostechsupport@vishay.com typical characteristics (25 c, unless otherwise noted) output characteristics transfer characteristics transconductance 0 15 30 45 60 0 1 2 3 4 i d - drain current (a) v d s - drain-to- s ource voltage (v) v gs = 10 v thru 7 v v gs = 5 v v gs = 6 v 0 0.5 1 1.5 2 0 1.5 3 4.5 6 i d - drain current (a) v gs - g ate-to- s ource voltage (v) t c = 25 c t c = 125 c t c = - 55 c 0 15 30 45 60 75 0 6 12 18 24 30 g fs - transconductance ( s ) i d - drain current (a) t c = 25 c t c = 125 c t c = - 55 c on-resistance vs. drain current on-resistance vs. gate-to-source voltage gate charge 0.013 0.016 0.019 0.022 0.025 0.028 0 15 30 45 60 r d s (on) - on-resistance () i d - drain current (a) v gs gs gs s (on) - on-resistance () v gs - g ate-to- s ource voltage (v) t j = 125 c t j = 25 c i d =10 a 0 2 4 6 8 10 0 10 20 30 40 50 v gs - g ate-to- s ource voltage (v) q g - total g ate charge (nc) v d s = 80 v v d s = 25 v v d s = 50 v i d = 10 a
www.vishay.com 4 document number: 62781 s12-2730-rev. a, 12-nov-12 vishay siliconix SUP50N10-21P this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 for technical questions, contact:: pmostechsupport@vishay.com typical characteristics (25 c, unless otherwise noted) source-drain diode forward voltage capacitance on-resistance vs. junction temperature 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s - s ource current (a) v s d - s ource-to-drain voltage (v) t j = 150 c t j = 25 c 0 600 1200 1800 2400 3000 0 20 40 60 80 100 c - capacitance (pf) v d s - drain-to- s ource voltage (v) c iss c oss c rss 0.4 0.85 1.3 1.75 2.2 - 50 - 25 0 25 50 75 100 125 150 r d s (on) - on-resistance (normalized) t j - junction temperature ( c) v gs = 8 v i d = 10 a v gs = 10 v 0 threshold voltage drain source breadown vs. junction temperature current derating 1.8 2.2 2.6 3 3.4 3.8 - 50 - 25 0 25 50 75 100 125 150 v gs (th) (v) t j - temperature ( c) i d = 250 a 100 105 110 115 120 125 - 50 - 25 0 25 50 75 100 125 150 v d s (v) drain-to- s ource voltage t j - temperature ( c) i d = 250 a 0 15 30 45 60 0 25 50 75 100 125 150 i d - drain current (a) t c - case temperature ( c)
vishay siliconix SUP50N10-21P document number: 62781 s12-2730-rev. a, 12-nov-12 www.vishay.com 5 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 for technical questions, contact:: pmostechsupport@vishay.com typical characteristics (25 c, unless otherwise noted) vishay siliconix maintains worldwide manufacturing capability. pr oducts may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62781 . single pulse avalanche current capability vs. time 1 10 100 10 -5 10 -6 0.0001 0.001 0.01 0.1 i dav (a) time (s) t j = 25 c t j = 150 c safe operating area 0.01 0.1 1 10 100 0.1 1 10 100 i d - drain current (a) v d s - drain-to- s ource voltage (v) * v gs > minimum v gs at which r d s (on) is specified dc, 10 s, 1 s, 100 ms limited by r d s (on) * 1 ms t c = 25 c s ingle pulse bvd ss limited 10 ms 100 s normalized thermal transient impedance, junction-to-case 10 -4 10 -3 10 -2 10 -1 1 1 0.1 s quare wave pulse duration (s) normalized effective transient thermal impedance s ingle pulse 0.05 0.02 duty cycle = 0.5 0.2 0.1
package information www.vishay.com vishay siliconix revison: 16-jun-14 1 document number: 71195 for technical questions, contact: hvm@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 to-220ab note * m = 1.32 mm to 1.62 mm (dimension including protrusion) heatsink hole for hvm m * 3 2 1 l l(1) d h(1) q ? p a f j(1) b(1) e(1) e e b c d2 millimeters inches dim. min. max. min. max. a 4.25 4.65 0.167 0.183 b 0.69 1.01 0.027 0.040 b(1) 1.20 1.73 0.047 0.068 c 0.36 0.61 0.014 0.024 d 14.85 15.49 0.585 0.610 d2 12.19 12.70 0.480 0.500 e 10.04 10.51 0.395 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 f 1.14 1.40 0.045 0.055 h(1) 6.09 6.48 0.240 0.255 j(1) 2.41 2.92 0.095 0.115 l 13.35 14.02 0.526 0.552 l(1) 3.32 3.82 0.131 0.150 ? p 3.54 3.94 0.139 0.155 q 2.60 3.00 0.102 0.118 ecn: t14-0413-rev. p, 16-jun-14 dwg: 5471
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